CEM7350L 데이터 시트보기 (PDF) - Unspecified

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CEM7350L

N-Channel and P-Channel MOSFET use advanced trench Technology

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CEM7350L

Drain-Source Diode Characteristics

VSD

Source-Drain Diode Forward Voltage2 VGS=0V,IS=1A,,TJ=25℃

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IS

Continuous Source Current1,4

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VG=VD=0V , Force Current

ISM

Pulsed Source Current2,4

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1.2

V

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2.2

ns

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13.2

nC

N-Channel Typical Characteristics： (TC=25℃ unless otherwise noted)

Fig.1 Typical Output Characteristics

12

10

8

6

TJ=150℃

TJ=25℃

4

2

0

0

0.3

0.6

0.9

1.2

VSD , Source-to-Drain Voltage (V)

Fig.3 Forward Characteristics Of Reverse

Fig.2 On-Resistance vs. Gate-Source

Voltage

Fig.4 Gate-Charge Characteristics

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