CEM7350L 데이터 시트보기 (PDF) - Unspecified

부품명

상세내역

제조사

CEM7350L

N-Channel and P-Channel MOSFET use advanced trench Technology

Unspecified 

CEM7350L

VDS

90%

VGS

Td(on)

Tr

Ton

Td(off)

Tf

Toff

Fig.10 Switching Time Waveform

10%

Fig.11 Gate Charge Waveform

P-Channel Electrical Characteristics：(TA=25℃ unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA

-100 ---

---

V

VGS=0V, VDS=-100V,TJ=25℃

---

---

-1

μA

IDSS

Zero Gate Voltage Drain Current

VGS=0V, VDS=-80V,TJ=125℃

---

---

-10 μA

IGSS

Gate-Source Leakage Current

VGS=±20V, VDS=0A

---

--- ±100 nA

On Characteristics

VGS(th)

GATE-Source Threshold Voltage

VGS=VDS, ID=250μA

-1.2 -1.6 -2.5

V

RDS(ON)

Drain-Source On Resistance

VGS=-10V,ID=-1.8A

VGS=-4.5V,ID=-1.5A

---

165 200

mΩ

---

180 230

GFS

Forward Transconductance

VDS=--10V, ID=-3A

---

6.5

---

S

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

VDS=-50V, VGS=0V, f=1MHz

--- 1455 2200

---

880 1300 pF

Crss

Reverse Transfer Capacitance

---

58

85

Rg

Gate resistance

VGS=0V, VDS=0V, F=1MHz

---

16

---

Ω

www.doingter.cn

—5—

Share Link: