CEM8958 데이터 시트보기 (PDF) - Unspecified
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CEM8958 Datasheet PDF : 8 Pages
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CEM 8958
P-CH Electrical Characteristics：(TC=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
-30
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-30V
---
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
On Characteristics3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=-250μA
-1.5
RDS(ON)
Drain-Source On Resistance
VGS=-10V,ID=-6.5A
---
GFS
Forward Transconductance
VDS=-5V, ID=-6.5A
10
Dynamic Characteristics4
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics4
---
VDS=-15V, VGS=0V, f=1MHz ---
---
td(on)
Turn-On Delay Time
---
tr
Rise Time
VDD=-15V, RL=2.3Ω
---
td(off)
tf
Qg
Qgs
Qgd
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain “Miller” Charge
VGS=-10V,RGEN=6Ω
---
---
---
VDS=-15V,ID=-6.5A
---
VGS=-10V
---
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage3 VGS=0V,IS=6A
---
Typ Max Units
-33
---
V
---
-1
μA
--- ±100 nA
-1.9 -2.5
V
28
33
mΩ
---
---
S
520
---
100
---
pF
65
---
7.5
---
ns
5.5
---
ns
19
---
ns
7
---
ns
9.2
---
nC
1.6
---
nC
2.2
---
nC
---
-1.2
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
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