CEP93A3 데이터 시트보기 (PDF) - Unspecified

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CEP93A3

N-Channel MOSFET uses advanced trench technology

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

CEP93A3

Features：

1) VDS=30V,ID=180A,RDS(ON)≤ 3mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

GDS

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

Parameter

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

Continuous Drain Current-1

ID

EAS

PD

TJ, TSTG

Continuous Drain Current-TC=100℃

Pulsed Drain Current1

Single Pulse Avalanche Energy3

Power Dissipation4

Operating and Storage Junction Temperature Range

Thermal Characteristics：

Ratings

30

±20

180

127

720

439

115

-55 to +175

Symbol

Parameter

Max

RƟJC

Thermal Resistance,Junction to Case1

1.3

RƟJA

Thermal Resistance,Junction to Ambient1

62.5

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—1—

Units

V

V

A

mJ

W

℃

Units

℃/W

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