KHB3D0N70F 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd

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KHB3D0N70F

N-Channel 700 V (D-S) Power MOSFET

VBsemi Electronics Co.,Ltd 

KHB3D0N70F

N-Channel 700 V (D-S) Power MOSFET

www.VBsemi.tw

PRODUCT SUMMARY

VDS (V)

RDS(on) max. () at 25 °C

Qg Typ. (nC)

Qgs (nC)

Qgd (nC)

Configuration

700

VGS = 10 V

1.4

24

6

11

Single

FEATURES

• Low Gate Charge Qg Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Compliant to RoHS directive 2002/95/EC

TO-220 FULLPAK

GDS

Top View

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-source voltage

Gate-source voltage

Continuous drain current (TJ = 150 °C) e

Pulsed drain current a

Linear derating factor

VDS

VGS

VGS at 10 V

TC = 25 °C

TC = 100 °C

ID

IDM

Single pulse avalanche energy b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dV/dt d

TJ = 125 °C

EAS

PD

TJ, Tstg

dV/dt

Soldering recommendations (peak temperature) c

For 10 s

Mounting torque

M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 2 A

c. 1.6 mm from case

d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C

e. Limited by maximum junction temperature

E-mail：China@VBsemi TEL:86-755-83251052

LIMIT

700

± 30

7

5

18

0.63

56

31

-55 to +150

37

27

300

0.6

UNIT

V

A

W/°C

mJ

W

°C

V/ns

°C

Nm

1

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