KDE 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd
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KDE Datasheet PDF : 8 Pages
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KDE
N-Channel 30 V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.023 at VGS = 10 V
30
0.027 at VGS = 4.5 V
ID (A)a, e
4.5
4.0
Qg (Typ.)
4.2 nC
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low On-Resistance
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters, High Speed Switching
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
IDM
30
± 20
4.5e
4.0e
4.1b, c
3.6b, c
25
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
IS
PD
TJ, Tstg
2.1
1.1b, c
2.5
1.6
1.3b, c
0.8b, c
- 55 to 150
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Symbol
RthJA
RthJF
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
Typical
75
40
Maximum
100
50
Unit
V
A
W
°C
Unit
°C/W
E-mail：China@VBsemi TEL:86-755-83251052
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