YFW2301 데이터 시트보기 (PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
부품명
상세내역
제조사
YFW2301 Datasheet PDF : 2 Pages
| |||
■P-Channel MOSFET
YFW2301 SOT-23
■ FEATURES
TrenchFET Power MOSFET
3
2
1. Gate
1
2. Source
3. Drain
■ Simplified outline(SOT-23)
■ MARKING
Marking
A1SHB
D
G
S
■ MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
PD
Tj
Tstg
Drain-Source voltage
Gate-Source voltage
Drain current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
-20
±12
-3
1
150
-55-150
Units
V
V
A
W
℃
℃
■ ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=-250uA
-20
Gate-Threshold Voltage
Vth(GS) VDS= VGS, ID=-250 uA
-0.4
-0.7
Gate-body Leakage
IGSS
VDS=0V, VGS=±12V
Zero Gate Voltage Drain Current
IDSS
VDS=-20V, VGS=0V
VGS=-4.5V, ID=-3A
64
Drain-Source On-Resistance
rDS(ON)
VGS=-2.5V, ID=-2A
89
Forward Trans conductance
gfs
VDS=-5V, ID=-2.8A
9.5
Dynamic Characteristics
Input Capacitance
Ciss
405
Output Capacitance
Coss
VDS=-10V, VGS=0V,
f=1MHz
75
Reverse Transfer Capacitance
Crss
55
Switching Capacitance
Turn-on Delay Time
td(on)
11
Turn-on Rise Time
tr
VDD=-10V, ID=-1A,
VGS=-4.5V
35
Turn-off Delay Time
td(off)
RGEN=10Ω
30
Turn-off Fall Time
tf
10
Total Gate Charge
Qg
VDS=-10V, ID=-3A,
3.3
Gate-Source Charge
Qgs
VGS=-2.5V,
0.7
Gate-Drain Charge
Qgd
1.3
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V, ID=-1.3A
Diode Forward Current
Is
MAX
-1
±100
-1
110
140
12
-1.2
-1.3
UNIT
V
V
nA
uA
mΩ
mΩ
s
pF
nS
nS
nS
nS
nC
nC
nC
V
A
www.yfwdiode.com
1/2
Dongguan YFW Electronics Co, Ltd.
Share Link: 