8N65M5 데이터 시트보기 (PDF) - STMicroelectronics

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8N65M5

N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK

STMicroelectronics 

STB/D/F/I/P/U8N65M5

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(off)

tr(V)

tc(off)

tf(i)

Turn-off delay time

Rise time

Cross time

Fall time

Test conditions

VDD = 400 V, ID = 4A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 20)

(see Figure 23)

Min. Typ. Max. Unit

50

ns

14

ns

-

-

20

ns

11

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 7 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100 A/µs

VDD = 100 V

(see Figure 20)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 7 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150 °C

(see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

7A

-

28 A

-

1.5 V

200

ns

- 1.6

µC

16

A

263

ns

- 1.9

µC

15

A

Doc ID 16531 Rev 3

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