STB8N65M5 데이터 시트보기 (PDF) - STMicroelectronics

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STB8N65M5

N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK

STMicroelectronics 

Electrical characteristics

STB/D/F/I/P/U8N65M5

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.10

AM08204v1

RDS(on)

(norm)

VGS=10V

ID=3.5A

AM08205v1

2.0

1.00

1.5

0.90

0.80

1.0

0.70

-50 -25 0 25 50 75 100 TJ(°C)

0.5

-50 -25 0 25 50 75 100 TJ(°C)

Figure 16. Switching losses vs gate resistance Figure 17. Normalized BVDSS vs temperature

(1)

E

(μJ)

ID=4A

VCL=400V

VGS=10V

100

AM08206v1

Eoff

Eon

BVDSS

(norm)

1.07

1.05

1.03

1.01

ID=1mA

AM08203v1

0.99

10

0.97

1

0

10

20

30

40

1. Eon including reverse recovery of a SiC diode

RG(Ω)

0.95

0.93

-50 -25

0 25 50 75 100

TJ(°C)

8/25

Doc ID 16531 Rev 3

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