STP34N65M5 데이터 시트보기 (PDF) - STMicroelectronics

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STP34N65M5

N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

STMicroelectronics 

STB34N65M5, STI34N65M5,

STP34N65M5, STW34N65M5

N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs

in D2PAK, I2PAK, TO-220 and TO-247 packages

Datasheet - production data

TAB

2

3

1

D2PAK

TAB

TAB

123

I2PAK

3

2

1

TO-220

3

2

1

TO-247

Figure 1. Internal schematic diagram

$

Features

Order codes VDS @ TJmax

STB34N65M5

STI34N65M5

STP34N65M5

710 V

STW34N65M5

RDS(on) max

0.11 Ω

ID

28 A

• Worldwide best RDS(on) * area

• Higher VDSS rating and high dv/dt capability

• Excellent switching performance

• 100% avalanche tested

Applications

• Switching applications

'

3

!-V

Description

These devices are N-channel MDmesh™ V

Power MOSFETs based on an innovative

proprietary vertical process technology, which is

combined with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

Order codes

STB34N65M5

STI34N65M5

STP34N65M5

STW34N65M5

Table 1. Device summary

Marking

Packages

34N65M5

D2PAK

I2PAK

TO-220

TO-247

Packaging

Tape and reel

Tube

October 2013

This is information on a product in full production.

DocID022853 Rev 3

1/22

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