P106AAT 데이터 시트보기 (PDF) - Unspecified
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P106AAT Datasheet PDF : 5 Pages
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P106AAT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
65V
10mΩ @VGS = 10V
74A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
65
Gate-Source Voltage
VGS
±20
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
ID
74
38
IDM
180
Avalanche Current
IAS
65
Avalanche Energy
L = 0.1mH
EAS
215
Power Dissipation
TC = 25 °C
PD
104
TC = 100 °C
46
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.2
°C / W
Ver 1.0
1
2012/4/16
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