P106AAT 데이터 시트보기 (PDF) - Unspecified
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P106AAT Datasheet PDF : 5 Pages
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P106AAT
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
65
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2.0 2.8 4.0
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 52V, VGS = 0V
VDS = 50V, VGS = 0V , TJ = 100 °C
1
10
Drain-Source On-State
RFoerswisatradncTera1 nsconductance1
RDS(ON)
gfs
VGS = 10V, ID = 42A
VDS = 10V, ID = 42A
8.2 10
43
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge2
Gate-Source Charge2
Gate-Drain Charge2
Turn-On Delay Time2
Rise Time2
Turn-Off Delay Time2
Fall Time2
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 0V, f = 1MHz
VDS = 0.5V(BR)DSS, VGS = 10V, ID = 42A
VDS = 33V,
ID @ 42A, VGS = 10V, RGEN = 6Ω
5010
351
323
0.8
119
30
50
30
39
80
24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
74
Forward Voltage1
VSD
IF = 42A, VGS = 0V
1.3
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 42A, dlF/dt = 100A / μS
53
143
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
UNIT
V
nA
mA
mΩ
S
pF
Ω
nC
nS
A
V
nS
nC
Ver 1.0
2
2012/4/16
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