P0AP03LCG 데이터 시트보기 (PDF) - Unspecified

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P0AP03LCG

P-Channel Logic Level Enhancement Mode MOSFET

Unspecified 

P0AP03LCG

P-Channel Logic Level Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V(BR)DSS

VGS(th)

IGSS

VGS = 0V, ID = -250mA

VDS = VGS, ID = -250mA

VDS = 0V, VGS = ±20V

-30

V

-0.8 -1.7 -2.5

±100 nA

Zero Gate Voltage Drain Current

IDSS

VDS = -24V, VGS = 0V

VDS = -20V, VGS = 0V , TJ = 125 °C

-1

mA

-10

Drain-Source On-State

Resistance1

Forward Transconductance1

RDS(ON)

gfs

VGS = -4.5V, ID = -3A

VGS = -10V, ID = -3.5A

VDS = -10V, ID = -3.5A

29 45

mΩ

19 28

16

S

DYNAMIC

Input Capacitance

Ciss

955

Output Capacitance

Coss

VGS = 0V, VDS = -15V, f = 1MHz

142

pF

Reverse Transfer Capacitance

Crss

121

Gate Resistance

Total Gate Charge2

Gate-Source Charge2

Gate-Drain Charge2

Turn-On Delay Time2

Rise Time2

Turn-Off Delay Time2

Fall Time2

Rg

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

VGS = 0V, VDS = 0V, f = 1MHz

VDS = -15V, VGS = -10V,

ID = -3.5A

VDS = -15V,

ID @ -3.5A, VGS = -10V, RGS = 6Ω

12

Ω

21.5

2.2

nC

5

15

11

nS

25

10

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

Forward Voltage1

IS

VSD

IF = -3.5A, VGS = 0V

-2 A

-1 V

Reverse Recovery Time

Reverse Recovery Charge

trr

Qrr

IF = -3.5A, dlF/dt = 100A / mS

1Pulse test : Pulse Width  300 msec, Duty Cycle  2％.

12

nS

5

nC

2Independent of operating temperature.

REV 1.0

2

2017/2/20

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