MUR3060CTR 데이터 시트보기 (PDF) - Thinki Semiconductor Co., Ltd.

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MUR3060CTR

30 Ampere Heatsink Dual Common Anode Fast Recovery Half Bridge Rectifiers

Thinki Semiconductor Co., Ltd. 

MUR3020CTR thru MUR3060CTR

®

Pb Free Plating Product

MUR3020CTR/MUR3040CTR/MUR3060CTR

Pb

30 Ampere Heatsink Dual Common Anode Fast Recovery Half Bridge Rectifiers

Features

Latest P/G technology with super fast recovery time

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

Plating Power Supply,SMPS,Motor Control and UPS

Car Audio Amplifiers and Sound Device Systems

Mechanical Data

Case: Heatsink TO-220AB

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.2 gram approximately

TO-220AB

.419(10.66)

.387(9.85)

.139(3.55)

MIN

Unit : inch (mm)

.196(5.00)

.163(4.16)

.054(1.39)

.045(1.15)

.038(0.96)

.019(0.50)

.1(2.54)

.1(2.54)

.025(0.65)MAX

Case

Case

Case

Case

Positive

Negative

Doubler

Series

Common Cathode Common Anode Tandem Polarity Tandem Polarity

Suffix "CT"

Suffix "CTR"

Suffix "CTD" Suffix "CTS"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25oC ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL MUR3020CTR MUR3040CTR MUR3060CTR UNIT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current TC=125oC

VRRM

VRMS

VDC

IF(AV)

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM

(JEDEC method)

Maximum Instantaneous Forward Voltage

VF

@ 15.0 A

Maximum DC Reverse Current @TJ=25oC

At Rated DC Blocking Voltage @TJ=125oC

IR

Maximum Reverse Recovery Time (Note 1) Trr

Typical junction Capacitance (Note 2)

CJ

Operating Junction and Storage

Temperature Range

TJ, TSTG

200

140

200

0.98

400

280

400

30.0

300

1.3

5

100

35-60

150

-55 to +150

600

V

420

V

600

V

A

A

1.7

V

uA

uA

nS

pF

oC

NOTES : (1) Reverse recovery test conditions IF = 0.5A IR = 1.0A Irr = 0.25A.

(2) Thermal Resistance junction to terminal.

(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Rev.07C

Page 1/2

© 2006 Thinki Semiconductor Co., Ltd.

http://www.thinkisemi.com/

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