P0420AI 데이터 시트보기 (PDF) - Unspecified
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P0420AI Datasheet PDF : 6 Pages
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P0420AI / P0420AD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS
VGS = 0V, ID = 250mA
200
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2
3
4
Gate-Body Leakage
IGSS
VDS = 0V, VGS = ±20V
±100
Zero Gate Voltage Drain Current
IDSS
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V , TJ = 125 °C
1
10
Drain-Source On-State
FRoerswisatradncTera1 nsconductance1
RDS(ON)
gfs
VGS = 10V, ID = 2A
VDS = 10V, ID = 4A
0.5 0.7
10
DYNAMIC
Input Capacitance
Ciss
504
Output Capacitance
Coss
VGS = 0V, VDS = 25V, f = 1MHz
77
Reverse Transfer Capacitance
Crss
20
Total Gate Charge2
Qg
16
Gate-Source Charge2
Qgs
VDS = 160V, ID = 4A, VGS = 10V
2
Gate-Drain Charge2
Qgd
6
Turn-On Delay Time2
td(on)
23
Rise Time2
Turn-Off Delay Time2
tr
td(off)
VDS = 100V, ID @ 4A, VGS = 10V
33
45
Fall Time2
tf
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current
IS
4
Forward Voltage1
VSD
IF =4A, VGS = 0V
1.6
Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
IF = 4A, dlF/dt = 100A / mS
108
382
1Pulse test : Pulse Width 300 msec, Duty Cycle 2％.
2Independent of operating temperature.
UNIT
V
nA
mA
Ω
S
pF
nC
nS
A
V
nS
nC
Ver 1.1
2
2013-3-13
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