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FMB8F 데이터 시트보기 (PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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FMB8F
YFWDIODE
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD YFWDIODE
FMB8F Datasheet PDF : 3 Pages
1 2 3
1A SURFACE MOUNT GLASS PASSIVATED BRIDGE
RECTIFIER Reverse Voltage - 100 to 1000 V
Forward Current - 1A
FEATURES
High current capability
Low forward voltage drop
Glass Passivated Chip Junction
Low power loss, high efficiency
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: MBF
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 75mg / 0.0026oz
FMB1F THRU FMB10F MBF
 
 
 
 
 
 MBF
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Symbols FMB1F FMB2F FMB4F FMB6F FMB8F FMB10F Units
Maximum Repetitive Peak Reverse Voltage
VRRM
100
200
400
600
800
1000
V
Maximum RMS voltage
Maximum DC Blocking Voltage
VRMS
70
VDC
100
140
280
420
560
700
V
200
400
600
800
1000
V
Average Rectified Output Current at Tc = 125 °C
Io
Peak Forward Surge Current 8.3 ms Single Half
Sine-Wave Superimposed on Rated Load(JEDEC
IFSM
method)
Forward Voltage per element at 1.0A
VF
Maximum DC Reverse Current @TA=25°C
at Rated DC Blocking Voltage @TA=125°C
Typical Junction CapacitanceNote1
Maximum Reverse Recovery Time Note2
Typical Thermal Resistance Note3
Operating and Storage Temperature Range
IR
Cj
Trr
Trr(typ)
RθJA
RθJC
Tj, Tstg
1Measured at 1 MHz and applied reverse voltage of 4 V D.C
2Mounted on glass epoxy PC board with 4×1.5"×1.5"3.81×3.81 cmcopper pad.
1
35
1.3
5
50
15
500
300
80
30
-55 ~ +150
A
A
V
μA
pF
nS
°C/W
°C
www.yfwdiode.com
1/3
Dongguan YFW Electronics Co, Ltd.

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