ESD5Z12T1G(2012) 데이터 시트보기 (PDF) - ON Semiconductor

부품명

상세내역

제조사

ESD5Z12T1G
(Rev.:2012)

Transient Voltage Suppressors

ON Semiconductor 

ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

IEC 61000−4−2 (ESD)

Contact

Air

kV

30

30

IEC 61000−4−4 (EFT)

40

A

ESD Voltage

Per Human Body Model

Per Machine Model

kV

16

V

400

Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25C

PD

200

mW

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

C

Lead Solder Temperature − Maximum (10 Second Duration)

TL

260

C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

See Application Note AND8308/D for further description of survivability specs.

ELECTRICAL CHARACTERISTICS

(TA = 25C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

Ppk

Peak Power Dissipation

C

Max. Capacitance @VR = 0 and f = 1 MHz

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

I

IF

VC VBR VRWM

IIRT VF

V

IPP

Uni−Directional TVS

http://onsemi.com

2

Share Link: