ESD5Z12T1G(2012) 데이터 시트보기 (PDF) - ON Semiconductor

부품명

상세내역

제조사

ESD5Z12T1G
(Rev.:2012)

Transient Voltage Suppressors

ON Semiconductor 

ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)

Device*

ESD5Z2.5T1G

ESD5Z3.3T1G

ESD5Z5.0T1G

VBR (V)

VRWM IR (mA)

@ IT

(V) @ VRWM (Note 2) IT

VC (V)

@ IPP =

5.0 A†

Device

Marking Max Max

ZD

2.5

6.0

ZE

3.3

0.05

ZF

5.0

0.05

Min mA

Typ

4.0

1.0

6.5

5.0

1.0

8.4

6.2

1.0

11.6

VC (V) @ IPP Ppk

C

Max IPP† (A)† (W)† (pF)

VC

Per

IEC61000−4−2

Max

Max Max Typ

(Note 3)

10.9

11.0 120 145 Figures 1 and 2

See Below

14.1

11.2 158 105

(Note 4)

18.6

9.4 174 80

ESD5Z6.0T1G

ZG

6.0

0.01

6.8

1.0

12.4

20.5

8.8 181 70

ESD5Z7.0T1G

ZH

7.0

0.01

7.5

1.0

13.5

22.7

8.8 200 65

ESD5Z12T1G

ZM

12

0.01

14.1 1.0

17

25

9.6 240 55

* Include SZ-prefix devices where applicable.

†Surge current waveform per Figure 5.

2. VBR is measured with a pulse test current IT at an ambient temperature of 25C.

3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

4. ESD5Z5.0T1G shown below. Other voltages available upon request.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV contact per IEC 61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV contact per IEC 61000−4−2

http://onsemi.com

3

Share Link: