ES5ABF 데이터 시트보기 (PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

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ES5ABF

Surface Mount Superfast Recovery Rectifier

DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 

ES5ABF THRU ES5JBF

Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram

50 ohm

Noninductive

10 ohm

Noninductive

trr

+0.5

+

25Vdc

approx

-

1 ohm

NonInductive

D.U.T

PULSE

GENERATOR

Note 2

OSCILLOSCOPE

Note 1

0

-0.25

Note：1.Rise Time = 7ns, max.

Input Impedance = 1megohm,22pF.

2. Ries Time =10ns, max.

Source Impedance = 50 ohms.

Fig.2 Maximum Average Forward Current Rating

6

5

4

3

2

Single phase half wave resistive

1 or inductive P.C.B mounted on

0.5×0.5"(12.7×12.7mm) pad areas.

0

25 50 75 100 125 150 175

Lead Temperature (°C)

Fig.4 Typical Forward Characteristics

10

TJ=25°C

1.0

0.1

0.01

ES5ABF~ES5DBF

ES5EBF/WS5GBF

ES5JBF

0.001

0

0.5

1.0

1.5

2.0

2.5

Instaneous Forward Voltage (V)

-1.0

10ns/div

Set time Base for 10ns/div

Fig.3 Typical Reverse Characteristics

300

100

TJ=125°C

10

TJ=75°C

1.0

TJ=25°C

0.1

0

20

40

60

80

100

% of PIV.VOLTS

Fig.5 Typical Junction Capacitance

150

125

100

75

50

TJ=25°C

25 f = 1.0MHz

Vsig = 50mVp-p

0.1

1

10

100

Reverse Voltage (V)

Fig.6 Maximum Non-Repetitive Peak

Forward Surage Current

175

ES5ABF~ES5DBF

150

ES5EBF/WS5JBF

125

100

75

50

25

8.3 ms Single Half Sine Wave

(JEDEC Method)

00

1

10

100

Number of Cycles

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