3N80ZL-TN3-R 데이터 시트보기 (PDF) - Unisonic Technologies

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3N80ZL-TN3-R

3A, 800V N-CHANNEL POWER MOSFET

Unisonic Technologies 

3N80Z

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage (VGS=0V)

VDSS

800

V

Gate-Source Voltage

VGSS

±20

V

Minimum Gate-Source Breakdown Voltage

(IGS=±1mA)

BVGSO

30

V

Continuous Drain Current

ID

3.0

A

Pulsed Drain Current

IDM

12

A

Avalanche Current (Note 2)

IAR

4.0

A

Single Pulse Avalanche Energy (Note 3)

EAS

150

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

3.1

V/ns

Power Dissipation

TO-220F1

TO-252

PD

25

W

50

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L=35mH, IAS=3.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C.

4. ISD≤3.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

 THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220F1

TO-252

TO-220F1

TO-252

SYMBOL

θJA

θJC

RATING

62.5

110

5.0

2.5

UNIT

°C/W

°C/W

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-912.D

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