3N80ZL-TF1-R 데이터 시트보기 (PDF) - Unisonic Technologies
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3N80ZL-TF1-R Datasheet PDF : 8 Pages
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3N80Z
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS
IDSS
IGSS
VGS=0V, ID=250μA
VDS=800V, VGS=0V
VGS=±20V, VDS=0V
800
V
1 μA
±10 μA
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
VGS=10V, ID=1.5A
3.0
4.5 V
4.2 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1MHz
625
pF
63
pF
9
pF
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
VDS=100V, VGS=10V, ID=3.0A,
IG=1mA (Note 1, 2)
18.5
5.4
5.7
nC
nC
nC
tD(ON)
11.2
ns
tR
VDD =100V, VGS=10V, ID =3.0A,
20.2
ns
tD(OFF) RG=25Ω (Note 1, 2)
64
ns
tF
42.2
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
ISD
3.0 A
Maximum Body-Diode Pulsed Current
ISDM
12 A
Drain-Source Diode Forward Voltage
VSD
IS=3.0A ,VGS=0V
1.6 V
Reverse Recovery Time
Reverse Recovery Charge
trr
IS=3.0A, VGS=0V,
Qrr
diF/dt=100A/μs
380
ns
3.48
μC
Notes: 1. Pulse width=300μs, Duty cycle ≤1.5%
2. COSS(EQ) is defined as constant equivalent capacitance giving the same charging time as COSS when VDS
increases from 0to 80% VDSS.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-912.D
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