3N80ZL-TF1-T 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd
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3N80ZL-TF1-T Datasheet PDF : 9 Pages
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3N80ZL-TF1-T
www.VBsemi.tw
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.65
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 850 V, VGS = 0 V
VDS = 680 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.7 Ab
VDS = 100 V, ID = 3.7 Ab
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
VGS = 10 V
ID = 3.8 A, VDS = 400 V,
see fig. 6 and 13b
VDD = 400 V, ID = 3.8 A,
Rg = 6.2 Ω, RD= 52 Ω
see fig. 10b
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
Drain-Source Body Diode Characteristics
MIN.
850
-
2.0
-
-
-
4.5
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
V
0.98
-
V/°C
-
4.0
V
- ± 100 nA
-
1
μA
-
45
2.40 Ω
-
-
S
816
-
68
-
pF
17
-
-
28
-
5
nC
-
12
15
-
27
-
ns
66
-
30
-
5.0
-
nH
13
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
D
-
-
5.0
integral reverse
G
A
Pulsed Diode Forward Currenta
ISM
p - n junction diode
S
-
-
21
Body Diode Voltage
VSD
TJ = 25 °C, IS = 3.8 A, VGS = 0 Vb
-
-
1.8
V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
TJ = 25 °C, IF = 3.8 A,
dI/dt = 100 A/μsb
-
320
ns
-
3.3
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
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