3N40-220 데이터 시트보기 (PDF) - Inchange Semiconductor

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3N40-220

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

3N40

·FEATURES

·Drain Current ID= 3A@ TC=25℃

·Drain Source Voltage-

: VDSS= 400V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 2.6Ω(Max)

·Fast Switching

·APPLICATIONS

·Switch regulators

·Switching converters motor drivers and relay drivers

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

400

V

VGS

Gate-Source Voltage-Continuous

±30

V

ID

Drain Current-Continuous

3

A

IDM

Drain Current-Single Plused

12

A

PD

Total Dissipation @TC=25℃

28

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

4.9 ℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

62.5 ℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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