3N40 데이터 시트보기 (PDF) - Inchange Semiconductor
부품명
상세내역
제조사
3N40 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
3N40
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-voltage
IS= 3A ;VGS= 0
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
VGS= 10V; ID= 1.5A
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=400V; VGS= 0
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
VGS=10V;
RGS=25Ω
ID=3A;
VDD=200V;
MIN TYPE MAX UNIT
400
V
2.0
4.0
V
1.4
V
1.6
Ω
±100 nA
10
µA
130
30
ns
70
50
·
isc website：www.iscsemi.com
2 isc & iscsemi is registered trademark
Share Link: 