3N50Z 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd

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3N50Z

N-Channel 650 V (D-S) Power MOSFET

VBsemi Electronics Co.,Ltd 

3N50Z

800

ID

TOP

2.3A

3.3A

BOTTOM 4A

600

400

200

0

25

50

75

100

125

150

Starting TJ , Junction Temperature ( °C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

800

780

760

740

720

700

A

0

1

2

3

4

5

6

I av , Avalanche Current (A)

Fig. 12d - Typical Drain-to Source Voltage vs. Avalanche

Current

www.VBsemi.tw

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

E-mail：China@VBsemi TEL:86-755-83251052

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