3N50L-TN3-R 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd

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3N50L-TN3-R

Power MOSFET

VBsemi Electronics Co.,Ltd 

3N50L-TN3-R

2000

1600

1200

800

VGS = 0V,

f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

iss

oss

400

rss

0

A

1

10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20 ID = 3.2 A

16

12

VDS = 520V

VDS = 325V

VDS = 130V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

10

20

30

40

50

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

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10

5

TJ = 150° C

1

TJ = 25° C

VGS = 0 V

0.1

0.2

0.4

0.6

0.8

1.0

1.2

VSD ,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

10

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10us

5

100us

1ms

1

10ms

TC = 25°C

TJ = 150°C

Single Pulse

0.1

10

100

1000

10000

VDS , Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

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4

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