3N50L-TN3-T(2011) 데이터 시트보기 (PDF) - Unisonic Technologies
부품명
상세내역
제조사
3N50L-TN3-T Datasheet PDF : 6 Pages
| |||
3N50
Preliminary
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous (TC=25°C)
ID
Pulsed (Note 1)
IDM
3*
A
12 *
A
Avalanche Current (Note 1)
IAR
3
A
Avalanche Energy
Single Pulsed (Note 2)
EAS
Repetitive (Note 3)
EAR
200
mJ
6.2
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
TO-220F
TC=25°C
TO-252
Power Dissipation
TO-220F
PD
Derate above 25°C
TO-252
25
W
50
0.2
W/°C
0.4
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
* Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F
TO-252
TO-220F
TO-252
SYMBOL
θJA
θJC
RATINGS
62.5
110
4.9
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-530.a
Share Link: 