3N50L-TF3-T 데이터 시트보기 (PDF) - Unisonic Technologies
부품명
상세내역
제조사
3N50L-TF3-T Datasheet PDF : 6 Pages
| |||
3N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous (TC=25°C)
ID
Pulsed (Note 2)
IDM
3 (Note 5)
A
12 (Note 5)
A
Avalanche Current (Note 2)
IAR
3
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
Repetitive (Note 4)
EAR
200
mJ
6.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220F
Power Dissipation (TC=25°C)
TO-252
TO-220F
PD
Derate above 25°C
TO-252
25
W
50
0.2
0.4
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 40mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F
TO-252
TO-220F
TO-252
SYMBOL
θJA
θJC
RATINGS
62.5
110
4.9
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-530.C
Share Link: 