SI2333CDS-T1-GE3 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd
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SI2333CDS-T1-GE3 Datasheet PDF : 9 Pages
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SI2333CDS-T1-GE3
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
5
VGS = 5 V thru 3 V
15
VGS = 2.5 V
4
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10
VGS = 2 V
5
VGS = 1.5 V
0
0
0.5
1
1.5
2
VDS - Drain-to-Source Voltage (V)
Output Characteristics
3
2
TC = 25 °C
1
TC = 125 °C
0
TC = - 55 °C
0
0.5
1
1.5
2
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.08
0.06
0.04
0.02
VGS = 2.5 V
VGS = 4.5 V
VGS = 10 V
0.00
0
5
10
15
20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
1400
1050
Ciss
700
350
Crss
Coss
0
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
Capacitance
5
ID = 5.1 A
4
VDS = 5 V
3
VDS = 10 V
2
VDS = 16 V
1
1.5
VGS = 10 V
1.3
1.1
0.9
VGS = 4.5 V
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
Gate Charge
0.7
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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