SI2333DDS-T1-GE3 데이터 시트보기 (PDF) - VBsemi Electronics Co.,Ltd

부품명

상세내역

제조사

SI2333DDS-T1-GE3

P-Channel 20-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

SI2333DDS-T1-GE3

P-Channel 20-V (D-S) MOSFET

www.VBsemi.tw

MOSFET PRODUCT SUMMARY

VDS (V)

- 20

RDS(on) ()

0.035 at VGS = - 10 V

0.043 at VGS = - 4.5 V

ID (A)a

- 5e

-5e

0.061 at VGS = - 2.5 V

- 4.8

Qg (Typ.)

10 nC

TO-236

(SOT-23)

G1

S2

3D

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET

• 100 % Rg Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch

• PA Switch

• DC/DC Converters

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

TC = 70 °C

TA = 25 °C

ID

TA = 70 °C

Pulsed Drain Current

IDM

Continuous Source-Drain Diode Current

TC = 25 °C

TA = 25 °C

IS

TC = 25 °C

Maximum Power Dissipation

TC = 70 °C

TA = 25 °C

PD

TA = 70 °C

Operating Junction and Storage Temperature Range

TJ, Tstg

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambientb, d

Maximum Junction-to-Foot (Drain)

5 s

Steady State

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under steady state conditions is 166 °C/W.

e. Package limited.

Symbol

RthJA

RthJF

Typical

75

40

Limit

- 20

± 12

- 5e

- 4.8

- 4.5b, c

- 3.5b, c

- 18

- 2.1

- 1.0b, c

2.5

1.6

1.25b, c

0.8b, c

- 55 to 150

Maximum

100

50

E-mail：China@VBsemi TEL:86-755-83251052

Unit

V

A

W

°C

Unit

°C/W

1

Share Link: