SI2347DS 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI2347DS Datasheet PDF : 10 Pages
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Si2347DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100.0
0.125
10.0
TJ = 150 °C
0.1
0.075
0.05
1.0
TJ = 25 °C
0.025
ID = 3.8 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2
30
1.82
20
1.64
ID = 250 μA
1.46
10
1.28
1.1
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
0
0.001 0.01
0.1
1
Time (s)
10
100
Single Pulse Power
Limited by RDS(on)*
10
100 μs
1
1 ms
10 ms
0.1
100 ms
TA = 25 °C
BVDSS Limited
10 s, 1 s
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
www.vishay.com
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 62827
4
S13-0111-Rev. A, 21-Jan-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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