SI2356DS 데이터 시트보기 (PDF) - Vishay Semiconductors

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SI2356DS

N-Channel 40 V (D-S) MOSFET

Vishay Semiconductors 

Si2356DS

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100

10

TJ = 150 °C

TJ = 25 °C

1

0.1

0.0

0.3

0.6

0.9

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.120

0.100

ID = 3.2A

0.080

0.060

0.040

TJ = 125 °C

TJ = 25 °C

0.020

0.000

0

2

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

1.4

30

ID = 250 μA

1.22

20

1.04

0.86

10

0.68

0.5

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

0

0.001 0.01

0.1

1

Time (s)

10

100

Single Pulse Power (Junction-to-Ambient)

100

10

Limited by RDS(on)*

100 μs

1

1 ms

10 ms

0.1

100 ms

10s, 1 s

DC,

0.01

0.001

TA = 25 °C

Single Pulse

BVDSS Limited

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

www.vishay.com

For technical questions, contact: pmostechsupport@vishay.com

Document Number: 62893

4

S13-1814-Rev. A, 12-Aug-13

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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