SI2369DS 데이터 시트보기 (PDF) - KEXIN Industrial

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SI2369DS

P-Channel MOSFET

KEXIN Industrial 

SMD Type

P-Channel MOSFET

SI2369DS (KI2369DS)

MOSFET

■ Electrical Characteristics Ta = 25℃

Parameter

Drain-Source Breakdown Voltage

Symbol

VDSS

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage Current

Gate Threshold Voltage

IGSS

VGS(th)

Static Drain-Source On-Resistance *1

RDS(On)

On State Drain Current *1

Forward Transconductance *1

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

ID(ON)

gFS

Ciss

Coss

Crss

Rg

Total Gate Charge

Qg

Gate Source Charge

Qgs

Gate Drain Charge

Qgd

Turn-On DelayTime

td(on)

Turn-On Rise Time

tr

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

tf

Turn-On DelayTime

td(on)

Turn-On Rise Time

tr

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

tf

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Reverse Recovery Fall Time

ta

Reverse Recovery Rise Time

tb

Maximum Body-Diode Continuous Current

IS

Pulse Diode Forward Current (t = 100 μs)

ISM

Diode Forward Voltage

VSD

NOTES:

*1. Pulse test; pulse width ≤300 μs, duty cycle ≤2 %.

Test Conditions

Min Typ Max Unit

ID=-250μA, VGS=0V

-30

V

VDS=-30V, VGS=0V

VDS=-30V, VGS=0V, TJ=55℃

-1

μA

-5

VDS=0V, VGS=±20V

±100 nA

VDS=VGS , ID=-250μA

-1.2

-2.5 V

VGS=-10V, ID=-5.4A

29

VGS=-6V, ID=-5A

34 mΩ

VGS=-4.5V, ID=-4.6A

40

VGS=-10V, VDS≤-5V

-25

A

VDS=-15V, ID=-5.4A

18

S

1295

VGS=0V, VDS=-15V, f=1MHz

150

pF

130

f=1MHz

1.5

15.4 Ω

VGS=-10V, VDS=-15V, ID=-5.4A

36

VGS=-4.5V, VDS=-15V, ID=-5.4A

17

nC

3.4

3.8

20

VGS=-10V, VDS=-15V, RL=3.5Ω ,RGEN=1Ω

8

ID≌-4.3A

57

12

42 ns

VGS=-4.5V, VDS=-15V, RL=3.5Ω,RGEN=1Ω

24

ID≌-4.3A

45

20

23

IF=-4.3A, dI/dt=100A/us,TJ=25℃

14 nC

8

ns

7

TC=25℃

-2.1

A

-80

IS=-4.3A,VGS=0V

-1.2 V

■ Marking

Marking

H9**

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