SI4599DY 데이터 시트보기 (PDF) - Unspecified
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SI4599DY Datasheet PDF : 5 Pages
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Si4599DY
N-Channel Electrical Characteristics：(TC=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
ON/Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
40
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=40V
---
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
VGS=10V,ID=5A
---
RDS(ON)
Drain-Source On Resistance
VGS=4.5V,ID=3A
---
GFS
Forward Transconductance
VDS=10V, ID=3A
---
Dynamic Characteristics
Ciss
Input Capacitance
---
Coss
Output Capacitance
VDS=15V, VGS=0V, f=1MHz
---
Crss
Reverse Transfer Capacitance
---
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time2.3
---
Rise Time2.3
Turn-Off Delay Time2.3
VDS=20V, ID=1A,
---
VGS=4.5V,RGEN=25Ω
---
Fall Time2.3
---
Total Gate Charge2.3
---
Gate-Source Charge2.3
VGS=4.5V, VDS=20V,
---
ID=3A
Gate-Drain “Miller” Charge2.3
---
Drain-Source Diode Characteristics
VSD
LS
LSM
Notes:
Source-Drain Diode Forward Voltage1
Continuous Source Current
Pulsed Source Current
VGS=0V,IS=1A
---
VG=VD=0V , Force Current
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
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—2—
Typ Max Units
---
---
V
---
1
μA
--- ±100 nA
1.8
2.5
V
24
32
mΩ
32
45
3.6
---
S
420 800
65
120
pF
40
80
3.2
6
ns
8.6
16
ns
18
36
ns
6
12
ns
2.8
5.6
nC
0.5
1
nC
1.5
3
nC
---
1
V
---
6.7
A
---
13.4
A
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