SI4559ADY 데이터 시트보기 (PDF) - Unspecified
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SI4559ADY Datasheet PDF : 7 Pages
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Si4559ADY
N-Channel Electrical Characteristics：(TC=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
ON/Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
60
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=48V
---
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1
RDS(ON)
GFS
Rg
Drain-Source On Resistance2
Forward Transconductance
Gate Resistance
VGS=10V,ID=4A
---
VGS=4.5V,ID=3A
---
VDS=5V, ID=4A
---
VDS=0V , VGS=0V, f=1MHz ---
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
---
VDS=15V, VGS=0V, f=1MHz
---
---
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge（4.5V）
Qgs
Gate-Source Charge
Qgd
Gate-Drain “Miller” Charge
Drain-Source Diode Characteristics
---
VDD=30V, ID=4A, RG=3.3Ω
---
VGS=10V
---
---
---
VGS=10V, VDS=48V,
---
ID=4A
---
VSD
Source-Drain Diode Forward Voltage2 VGS=0V,IS =1A , TJ=25℃
---
Typ Max Units
---
---
V
---
1
μA
--- ±100 nA
---
2.5
V
---
40
mΩ
---
50
28.3
---
S
2.5
---
Ω
1027 ---
65
---
pF
46
---
3
---
ns
34
---
ns
23
---
ns
6
---
ns
19
---
nC
2.6
---
nC
4.1
---
nC
---
1.2
V
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