SI4559ADY 데이터 시트보기 (PDF) - Unspecified
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SI4559ADY Datasheet PDF : 7 Pages
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Si4559ADY
tr
Rise Time
RGEN=3.3Ω,ID=-1A
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19.6
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ns
td(off)
Turn-Off Delay Time
---
47.2
---
ns
tf
Fall Time
---
9.6
---
ns
Qg
Total Gate Charge（-4.5V）
---
11.8
---
nC
VGS=-4.5V, VDS=-48V,
Qgs
Gate-Source Charge
---
1.9
---
nC
ID=-3A
Qgd
Gate-Drain “Miller” Charge
---
6.5
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage3 VGS=0V,IS=-6.5A
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-1.2
V
IS
ISM
Notes:
Continuous Source Current1,5
Diode Forward Voltage2
VG =VD=0v,
, Force Current
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-4.1
A
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-14
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-24.4A
4.The power dissipation is limited by 150℃ junction temperature
Typical Characteristics： 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
(TC=25℃ unless otherwise noted)
10
80
ID=-3A
8
VGS=-10V
75
VGS=-7V
6
VGS=-5V
VGS=-4.5V
70
4
VGS=-3V
65
2
0
0
0.5
1
1.5
2
-VDS , Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
12
10
8
6
TJ=150℃
TJ=25℃
4
2
60
2
4
6
8
10
-VGS (V)
Fig.2 On-Resistance v.s Gate-Source
10
VDS=-20V
ID=-3A
8
Voltage
6
4
2
0
0
0.2
0.4
0.6
0.8
1
0
7
14
21
-VSD , Source-to-Drain Voltage (V)
QG , Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
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