SI4482DY-T1-GE3 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI4482DY-T1-GE3 Datasheet PDF : 5 Pages
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Si4482DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
Drain-Source On-State Resistanceb RDS(on)
VGS = 10 V, ID = 4.6 A
VGS = 6 V, ID = 4.0 A
Forward Transconductanceb
gfs
VDS = 15 V, ID = 4.6 A
Diode Forward Voltageb
VSD
IS = 2.1 A, VGS = 0 V
Dynamica
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 50 V, VGS = 10 V, ID = 4.6 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 50 V, RL = 50 Ω
ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.1 A, dI/dt = 100 A/µs
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Min.
Typ.a
Max.
Unit
2
V
± 100
nA
1
µA
20
20
A
0.045 0.060
Ω
0.050 0.080
20
S
1.2
V
30
50
7.5
nC
7
1
4.4
Ω
13
25
12
25
60
90
ns
25
40
50
80
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 70749
S09-0767-Rev. C, 04-May-09
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