SSM6P35AFE 데이터 시트보기 (PDF) - Toshiba
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SSM6P35AFE Datasheet PDF : 8 Pages
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SSM6P35AFE
4. Absolute Maximum Ratings (Note)
(Unless otherwise specified, Ta = 25 )(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
(Note 1)
(Note 1)
(Note 2)
(Note 3)
VDSS
VGSS
ID
IDP
PD
-20
V
±10
-250
mA
-600
150
mW
250
Channel temperature
Storage temperature
Tch
150
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 0.135 mm2 × 6)
Note 3: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2)
Note:
Note:
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
©2017 Toshiba Corporation
2
2017-06-22
Rev.2.0
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