MMG3001NT1 데이터 시트보기 (PDF) - NXP Semiconductors.

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MMG3001NT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

NXP Semiconductors. 

Table 4. Electrical Characteristics (VCC = 5.6 Vdc, 900 MHz, TA = 25C, 50 ohm system, in Freescale Application Circuit)

Characteristic

Symbol

Min

Typ

Max

Small--Signal Gain (S21)

Input Return Loss (S11)

Gp

18

20

—

IRL

—

--25

—

Output Return Loss (S22)

ORL

—

--22

—

Power Output @ 1dB Compression

P1dB

—

18.5

—

Third Order Output Intercept Point

OIP3

—

32

—

Noise Figure

NF

—

4.1

—

Supply Current

Supply Voltage

ICC

40

58

75

VCC

—

5.6

—

Unit

dB

dB

dB

dBm

dBm

dB

mA

V

Table 5. Functional Pin Description

Pin

Number

Pin Function

1

RFin

2

Ground

3

RFout/DC Supply

2

123

Figure 1. Functional Diagram

Table 6. ESD Protection Characteristics

Test Conditions/Test Methodology

Human Body Model (per JESD 22--A114)

Machine Model (per EIA/JESD 22--A115)

Charge Device Model (per JESD 22--C101)

Table 7. Moisture Sensitivity Level

Test Methodology

Per JESD 22--A113, IPC/JEDEC J--STD--020

Class

0

A

IV

Rating

Package Peak Temperature

Unit

1

260

C

MMG3001NT1

2

RF Device Data

Freescale Semiconductor, Inc.

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