MMA25312BT1 데이터 시트보기 (PDF) - NXP Semiconductors.
부품명
상세내역
제조사
MMA25312BT1 Datasheet PDF : 10 Pages
| |||
Freescale Semiconductor
Technical Data
Document Number: MMA25312B
Rev. 2, 9/2014
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
MMA25312BT1
The MMA25312B is a 2--stage high efficiency InGaP HBT driver amplifier
designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX
(802.16e) and wireless broadband mesh networks. It is suitable for applications
with frequencies from 2300 to 2700 MHz using simple external matching
components with a 3 to 5 V supply.
Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 150 mA
Frequency
Pout
(dBm)
Gps
(dB)
EVM
(%)
Test Signal
2300--2700 MHz, 26 dB
31 dBm
InGaP HBT LINEAR AMPLIFIER
2450 MHz
2350 MHz
20.5
27.4
3.0
WLAN (802.11g)
23.0
27.2
3.0
WiMAX (802.16e)
QFN 3 3
Features
Frequency: 2300--2700 MHz
P1dB: 31 dBm @ 2500 MHz
Power Gain: 26 dB @ 2500 MHz
Third Order Output Intercept Point: 40 dBm @ 2500 MHz
Active Bias Control (On--chip)
Single 3 to 5 V Supply
Single--ended Power Detector
Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Table 1. Typical CW Performance (1)
Characteristic
2300 2500 2700
Symbol MHz MHz MHz Unit
Small--Signal Gain
(S21)
Gp
26 26 24.5 dB
Input Return Loss
(S11)
IRL
--14 --12 --12 dB
Output Return Loss
(S22)
ORL
--11 --13 --15 dB
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Symbol Value
VCC
6
ICC
550
Pin
30
Tstg --65 to +150
TJ
175
Unit
V
mA
dBm
C
C
Power Output @
P1dB 30 31 29.8 dBm
1dB Compression
1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25C, 50 ohm system, CW
Application Circuit
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (2)
Thermal Resistance, Junction to Case
Case Temperature 91C, VCC1 = VCC2 = VBIAS = 5 Vdc
RJC
92
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
C/W
Freescale Semiconductor, Inc., 2012--2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMA25312BT1
1
Share Link: 