MMA25312BT1 데이터 시트보기 (PDF) - NXP Semiconductors.

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MMA25312BT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

NXP Semiconductors. 

Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 2500 MHz, TA = 25C, 50 ohm system, in Freescale CW Application

Circuit)

Characteristic

Symbol

Min

Typ

Max

Unit

Small--Signal Gain (S21)

Input Return Loss (S11)

Gp

24.5

26

—

dB

IRL

—

--12

—

dB

Output Return Loss (S22)

ORL

—

--13

—

dB

Power Output @ 1dB Compression

P1dB

—

31

—

dBm

Third Order Output Intercept Point, Two--Tone CW

OIP3

—

40

—

dBm

Noise Figure

NF

—

3.8

—

dB

Supply Current

Supply Voltage

Table 5. ESD Protection Characteristics

ICQ

110

124

138

mA

VCC

—

5

—

V

Test Methodology

Class

Human Body Model (per JESD 22--A114)

2

Machine Model (per EIA/JESD 22--A115)

A

Charge Device Model (per JESD 22--C101)

IV

Table 6. Moisture Sensitivity Level

Test Methodology

Per JESD22--A113, IPC/JEDEC J--STD--020

Rating

Package Peak Temperature

Unit

1

260

C

VBA1

VBIAS

RFin

VBA2

VCC1

VCC1

BIAS

CIRCUIT

PDET

Figure 1. Functional Block Diagram

RFout

RFout

VCC2

VBA2 VCC1 VCC1

12 11 10

VBA1 1

VBIAS 2

RFin 3

9 RFout

8 RFout

7 VCC2

456

N.C. N.C. PDET

Figure 2. Pin Connections

MMA25312BT1

2

RF Device Data

Freescale Semiconductor, Inc.

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