MMA20312BT1 데이터 시트보기 (PDF) - NXP Semiconductors.

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MMA20312BT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

NXP Semiconductors. 

3.00

1.6  1.6 solder pad with

thermal via structure. All

dimensions in mm.

0.70

0.30

2.00 3.40

0.50

Figure 16. PCB Pad Layout for QFN 3  3

MA01

YWZ

Figure 17. Product Marking

MMA20312BT1

10

RF Device Data

Freescale Semiconductor, Inc.

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