MMA20312BT1 데이터 시트보기 (PDF) - NXP Semiconductors.
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MMA20312BT1 Datasheet PDF : 15 Pages
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Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier
designed for use as a linear driver amplifier in wireless base station applications
as well as an output stage in femtocell or repeater applications. It is suitable for
applications with frequencies from 1800 to 2200 MHz such as TD--SCDMA,
PCS, UMTS and LTE. The amplifier is housed in a cost--effective, surface mount
QFN plastic package.
Typical Performance: VCC = 5 Vdc, ICQ = 70 mA, Pout = 17 dBm
Frequency
Gps
(dB)
ACPR
(dBc)
PAE
(%)
Test Signal
1880 MHz
1920 MHz
2010 MHz
2025 MHz
2140 MHz
29.0
--47.4
9.1
TD--SCDMA
29.0
--46.7
9.0
TD--SCDMA
27.4
--52.0
9.3
TD--SCDMA
26.8
--50.0
9.5
TD--SCDMA
27.0
--51.7
9.4
W--CDMA
Features
Frequency: 1800--2200 MHz
P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
Active Bias Control (adjustable externally)
Single 5 V Supply
Cost--effective 12--pin, 3 mm QFN Surface Mount Plastic Package
In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
Document Number: MMA20312B
Rev. 2, 9/2014
MMA20312BT1
1800--2200 MHz, 27.2 dB
30.5 dBm
InGaP HBT LINEAR AMPLIFIER
QFN 3 3
Table 1. Typical CW Performance (1)
Characteristic
1800 2140 2200
Symbol MHz MHz MHz Unit
Small--Signal Gain
(S21)
Gp
28.8 26.4 25.5 dB
Input Return Loss
(S11)
IRL --17.6 --10.9 --9.7 dB
Output Return Loss
(S22)
ORL --20.3 --14.7 --13.7 dB
Power Output @ 1dB P1dB
Compression
30.5
30.5 30.5 dBm
1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25C, 50 ohm system,
CW Application Circuit
Table 2. Maximum Ratings
Rating
Symbol
Supply Voltage
VCC
Supply Current
ICC
RF Input Power
Pin
Storage Temperature Range
Tstg
Junction Temperature
TJ
Value
6
550
14
--65 to +150
175
Unit
V
mA
dBm
C
C
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (2)
Thermal Resistance, Junction to Case
Case Temperature 86C, VCC1 = VCC2 = VBIAS = 5 Vdc
RJC
52
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
C/W
Freescale Semiconductor, Inc., 2010--2012, 2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BT1
1
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