MMA20312BT1 데이터 시트보기 (PDF) - NXP Semiconductors.

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MMA20312BT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

NXP Semiconductors. 

TYPICAL CHARACTERISTICS — TD--SCDMA

0

--5

--40C

--10

--15

85C

--20

25C

--25

--30

--35

1500

VCC1 = VCC2 = VBIAS = 5 Vdc

1750

2000

2250

2500

2750

f, FREQUENCY (MHz)

Figure 5. S11 versus Frequency versus

Temperature

35

30

--40C

25

85C

20

25C

15

10

5

VCC1 = VCC2 = VBIAS = 5 Vdc

0

1500

1750

2000

2250

2500

2750

f, FREQUENCY (MHz)

Figure 6. S21 versus Frequency versus

Temperature

0

--5

--10

--40C

--15

85C

25C

--20

--25

--30

--35

1500

VCC1 = VCC2 = VBIAS = 5 Vdc

1750

2000

2250

2500

2750

f, FREQUENCY (MHz)

Figure 7. S22 versus Frequency versus

Temperature

RF Device Data

Freescale Semiconductor, Inc.

MMA20312BT1

5

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