MMA20312BT1 데이터 시트보기 (PDF) - NXP Semiconductors.

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MMA20312BT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

NXP Semiconductors. 

MMA20312BT1

6

TYPICAL CHARACTERISTICS — TD--SCDMA

--10

200

--15

VCC1 = VCC2 = VBIAS = 5 Vdc 180

f = 2017.5 MHz

--20

160

--25

140

--30

25C 85C

120

--35 ICC

--40

100

--40C

80

--45

--50 ACPR

--40C

85C

60

40

--55

20

25C

--60

0

7

9

11 13 15 17 19 21 23

Pout, OUTPUT POWER (dBm)

Figure 8. ACPR versus Collector Current versus

Output Power versus Temperature

30

50

29 Gain

--40C

45

28

40

27

35

26

25C

30

25

85C

25

24 VCC1 = VCC2 = VBIAS = 5 Vdc

--40C

20

23 f = 2017.5 MHz

15

22

85C

10

21

PAE

25C

5

20

0

7

9

11 13 15 17 19 21 23

Pout, OUTPUT POWER (dBm)

Figure 9. Power Gain versus Power Added

Efficiency versus Output Power versus Temperature

31

VCC1 = VCC2 = VBIAS = 5 Vdc

30

29

--40C

28

25C

85C

27

26

25

24

1800

1850

1900

1950

2000

2050

f, FREQUENCY (MHz)

Figure 10. P1dB versus Frequency versus

Temperature, CW

RF Device Data

Freescale Semiconductor, Inc.

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