MMA20312BT1 데이터 시트보기 (PDF) - NXP Semiconductors.

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MMA20312BT1

Heterojunction Bipolar Transistor Technology (InGaP HBT)

NXP Semiconductors. 

TYPICAL CHARACTERISTICS — W--CDMA

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--55

--60

8

VCC1 = VCC2 = VBIAS = 5 Vdc

f = 2140 MHz

ICC

ACPR

10 12 14 16 18 20 22

Pout, OUTPUT POWER (dBm)

Figure 13. ACPR versus Collector Current

versus Output Power

200

180

160

140

120

100

80

60

40

20

0

24

30

50

29 VCC1 = VCC2 = VBIAS = 5 Vdc

45

f = 2140 MHz

28

40

27

Gain

35

26

30

25

25

24

20

23

PAE

15

22

10

21

5

20

0

8 10 12 14 16 18 20 22 24

Pout, OUTPUT POWER (dBm)

Figure 14. Power Gain versus Power Added

Efficiency versus Output Power

31

VCC1 = VCC2 = VBIAS = 5 Vdc

30

29

28

27

26

25

24

2100

2120

2140

2160

2180

2200

f, FREQUENCY (MHz)

Figure 15. P1dB versus Frequency, CW

RF Device Data

Freescale Semiconductor, Inc.

MMA20312BT1

9

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