BR24G04FJ-3A 데이터 시트보기 (PDF) - ROHM Semiconductor
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BR24G04FJ-3A Datasheet PDF : 36 Pages
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BR24G04-3A
●Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Ratings
Supply Voltage
VCC
Power Dissipation
Pd
Storage Temperature
Tstg
Operation Temperature Topr
-0.3 to +6.5
450 (SOP8)
450 (SOP-J8)
330 (TSSOP-B8)
310 (TSSOP-B8J)
310 (MSOP8)
300 (VSON008X2030)
800 (DIP-T8*1)
-65 to +150
-40 to +85
Input Voltage /
Output Voltage
-
-0.3 to Vcc+1.0
Junction Temperature Tjmax
Electrostatic discharge
voltage
VESD
(human body model)
*1 Not Recommended for New Designs.
150
-4000 to +4000
Unit
V
mW
°C
°C
V
°C
Remarks
When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.
When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.
When using at Ta=25°C or higher 3.3mW to be reduced per 1°C.
When using at Ta=25°C or higher 3.1mW to be reduced per 1°C.
When using at Ta=25°C or higher 3.1mW to be reduced per 1°C.
When using at Ta=25°C or higher 3.0mW to be reduced per 1°C
When using at Ta=25°C or higher 8.0mW to be reduced per 1°C.
The Max value of input voltage / output voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of input voltage
/ output voltage is not under -0.8V.
Junction temperature at the storage condition
V
●Memory Cell Characteristics (Ta=25°C, Vcc=1.6V to 5.5V)
Parameter
Limits
Min. Typ.
Max
Write cycles *2
1,000,000 -
-
Data retention *2
40
-
-
*2 Not 100% TESTED
Unit
Times
Years
●Recommended Operating Ratings
Parameter
Symbol
Ratings
Unit
Supply voltage
Input voltage
Vcc
1.6 to 5.5
VIN
0 to Vcc
V
●DC Characteristics (Unless otherwise specified, Ta=-40 to +85°C, Vcc =1.6 to 5.5V)
Parameter
Limits
Symbol
Unit
Min.
Typ.
Max.
Conditions
Input High Voltage1
VIH1
0.7Vcc
-
Vcc+1.0
V
1.7V≤Vcc≤5.5V
Input Low Voltage1
VIL1
-0.3*3
-
0.3Vcc
V
1.7V≤Vcc≤5.5V
Input High Voltage2
Input Low Voltage2
VIH2
VIL2
0.8Vcc
-0.3*3
-
Vcc+1.0
V
1.6V≤Vcc<1.7V
-
0.2Vcc
V
1.6V≤Vcc<1.7V
Output Low Voltage1
VOL1
-
-
0.4
V
IOL=3.0mA, 2.5V≤Vcc≤5.5V (SDA)
Output Low Voltage2
VOL2
-
-
0.2
V
IOL=0.7mA, 1.6V≤Vcc<2.5V (SDA)
Input Leakage Current
ILI
-1
-
1
μA VIN=0 to Vcc
Output Leakage Current
ILO
-1
-
1
μA VOUT=0 to Vcc (SDA)
Supply Current (Write)
ICC1
-
Supply Current (Read)
ICC2
-
Standby Current
ISB
-
*3 When the pulse width is 50ns or less, it is -0.8V.
-
2.0
Vcc=5.5V, fSCL=1MHz, tWR=5ms,
Byte write, Page write
mA Vcc=5.5V, fSCL=1MHz
-
2.0
Random read, current read,
sequential read
-
2.0
μA
Vcc=5.5V, SDA, SCL=Vcc
A0, A1, A2=GND,WP=GND
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TSZ02201-0R2R0G100560-1-2
11.Jun.2019 Rev.004
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