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LTST-M670TBKT 데이터 시트보기 (PDF) - Unspecified

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LTST-M670TBKT
ETC
Unspecified ETC
LTST-M670TBKT Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
LITE-ON TECHNOLOGY CORPORATION
Property of Lite-On Only
Electrical / Optical Characteristics at Ta=25
Parameter
Luminous Intensity
Symbol
IV
Part No.
LTST-
M670TBKT
Min. Typ. Max. Unit Test Condition
140
-
450 mcd
IF = 20mA
Note 1
Viewing Angle
2θ1/2
M670TBKT
120
deg Note 2 (Fig.5)
Peak Emission
Wavelength
Dominant Wavelength
λP
M670TBKT
468
nm
Measurement
@Peak (Fig.1)
λd
M670TBKT
465
-
475 nm
IF = 20mA
Note 3
Spectral Line Half-Width ∆λ
M670TBKT
25
nm
Forward Voltage
Reverse Current
VF
M670TBKT
2.8
IR
M670TBKT
3.8
V
10
μA
IF = 20mA
VR = 5V
Note 4
Notes: 1. Luminous intensity is measured with a light sensor and filter combination that approximates the
CIE eye-response curve.
2. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
3. The dominant wavelength, λd is derived from the CIE chromaticity diagram and represents the
single wavelength which defines the color of the device.
4. Reverse voltage (VR) condition is applied to IR test only. The device is not designed for reverse operation.
Part No. : LTST-M670TBKT
BNS-OD-C131/A4
Page : 3 of 11

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