R6011END3 데이터 시트보기 (PDF) - ROHM Semiconductor

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R6011END3

Nch 600V 11A Power MOSFET

ROHM Semiconductor 

R6011END3

　 　 　 　　 　

lThermal resistance

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

　 　 　 　 　 　 　 　 Datasheet

　

　 　　　　　　　　　　　　　　　　

Symbol

RthJC*4

RthJA

Tsold

Values

Unit

Min. Typ. Max.

-

- 1.0 ℃/W

-

- 147 ℃/W

-

- 265 ℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Drain - Source breakdown

voltage

Zero gate voltage

drain current

Gate - Source leakage current

Gate threshold voltage

Static drain - source

on - state resistance

Gate resistance

V(BR)DSS VGS = 0V, ID = 1mA

VDS = 600V, VGS = 0V

IDSS Tj = 25°C

Tj = 125°C

IGSS VGS = ±20V, VDS = 0V

VGS(th) VDS = 10V, ID = 1mA

VGS = 10V, ID = 3.8A

RDS(on)*6 Tj = 25°C

Tj = 125°C

RG f = 1MHz, open drain

Values

Unit

Min. Typ. Max.

600 -

-

V

　

　

　

-

- 100 μA

-

- 1000

-

- ±100 nA

2

-

4

V

　

　

　

- 340 390 mΩ

- 720 -

- 7.7 - Ω

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

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