R6012JNJ 데이터 시트보기 (PDF) - ROHM Semiconductor

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R6012JNJ

Nch 600V 12A Power MOSFET

ROHM Semiconductor 

R6012JNJ

　　　　　　

　 　 　 　 　 　 　 　 Datasheet

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Source current

Pulsed source current

IS*1

TC = 25℃

ISP*2

-

-

12

A

-

-

36

A

Source-Drain voltage

VSD*5 VGS = 0V, IS = 12A

-

- 1.7 V

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

trr*5

Qrr*5

IS = 12A

di/dt = 100A/μs

Irr*5

-

70

-

ns

- 250 - nC

- 7.2 -

A

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　

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20190527 - Rev.002

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